Silane coupling agent and method of manufacturing wire grid pattern using the same

ABSTRACT

A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional of U.S. patent application Ser. No.15/168,665, filed on May 31, 2016, and claims priority from and thebenefit of Korean Patent Application No. 10-2015-0137627, filed on Sep.30, 2015, which are hereby incorporated by reference for all purposes asif fully set forth herein.

BACKGROUND Field

Exemplary embodiments relate to a silane coupling agent and a method ofmanufacturing a wire grid pattern using the silane coupling agent.

Discussion of the Background

A wire grid pattern is collectively referred to as a wire grid structurein which metal wires protruding in the shape of stripes are arranged atpredetermined intervals.

A wire grid polarizer has polarization separation characteristics ofreflecting polarized light parallel to a wire grid direction andtransmitting polarized light perpendicular to the wire grid direction.Therefore, when the wire grid polarizer is used as a polarizing plate ofa liquid crystal display panel, the light reflected from the wire gridpolarizer is incident upon a backlight unit to be recycled, therebyimproving light efficiency.

Since the wire grid pattern has a width and cycle of only several tensto several hundreds of nanometers, a very precise process is required.An electron beam lithography process, a block copolymer patterningprocess, or a nano-imprint lithography process are exemplary means forforming a wire grid pattern. In particular, forming a wire grid patternusing a nano-imprint lithography process can also control nano-sizedpatterns, is advantageous in manufacturing a large-size wire gridpattern, and is effective in terms of costs.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventive concept,and, therefore, it may contain information that does not form the priorart that is already known in this country to a person of ordinary skillin the art.

SUMMARY

In a conventional nano-imprint lithography process, a metal layer, amask layer, and a resin layer are disposed on a base member, a gridpattern is transferred to the resin layer using a stamp, the stamp isremoved, and the metal layer is etched using the resin pattern as ananti-etching film so as to form a wire grid pattern. In this case, thereis a problem in that at least a part of the resin pattern is strippedtogether with the stamp during removing the stamp, and thus apreviously-designed pattern cannot be fully formed. Such a problembecomes more serious with an increase in pattern size precision.

Further, in order to perform a rework process of processing thenano-imprint lithography process by removing the defective resin patternand forming the resin layer again, it is difficult to completely removethe defective resin pattern such that no foreign matter remains as theresin pattern is first formed on the surface of the mask layer, and thetime and additional process taken to remove the defective resin patternmay cause the deterioration in processibility of a wire grid pattern.

Exemplary embodiments provide a method of manufacturing a wire gridpattern, which can prevent a resin pattern in a nano-print lithographyprocess from being stripped during removal of a stamp.

Exemplary embodiments also provide a method of manufacturing a wire gridpattern, which includes a rework process for easily removing a defectiveresin pattern.

Exemplary embodiments further provide a silane coupling agent, which canbe used to improve the method of manufacturing a wire grid pattern.

Additional aspects will be set forth in the detailed description whichfollows, and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concept.

An exemplary embodiment discloses a method of manufacturing a wire gridpattern that includes providing a laminate having a base member, a metallayer disposed on the base member, a mask layer disposed on the metallayer and containing a metal oxide, an adhesive layer disposed on themask layer, and a patterned resin layer disposed on the adhesive layerand formed by irradiation of first light; and irradiating the laminatewith second light.

An exemplary embodiment also discloses a method of manufacturing a wiregrid pattern including providing a laminate having a base member, ametal layer disposed on the base member, a mask layer containing a metaloxide and disposed on the metal layer, an adhesive layer disposed on themask layer, and a patterned resin layer disposed on the adhesive layer;treating the laminate with a base; and treating the laminate with anacid.

An exemplary embodiment further discloses a silane coupling agent. Thesilane coupling agent is represented by Chemical Formula 1-1, ChemicalFormula 2-1, or Chemical Formula 3-1 below:

wherein in the formula 1-1, R₁ and R₂ are each independently any one of—CH₃, —OCH₂CH₃, —OCH₃, and a functional group represented by ChemicalFormula 1-2 below; in the formula 2-1, R₁ and R₂ are each independentlyany one of —CH₃, —OCH₂CH₃, —OCH₃, and a functional group represented byChemical Formula 2-2 below; and in the formula 3-1, R₁ and R₂ are eachindependently any one of —CH₃, —OCH₂CH₃, —OCH₃, and a functional grouprepresented by Chemical Formula 3-2 below,

and in the formulae 1-1, 1-2, 2-1, 2-2, 3-1, and 3-2, R₃ is any one ofan acrylate group and a methacrylate group, and n is an integer of 1 to10.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the inventive concept, and, together with thedescription, serve to explain principles of the inventive concept.

FIG. 1 is a flowchart showing a method of manufacturing a wire gridpattern according to an exemplary embodiment.

FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, and FIG. 2E are cross-sectionalviews showing a process of forming a resin pattern of FIG. 1 in astepwise manner.

FIG. 3A, FIG. 3B, and FIG. 3C are cross-sectional views showing aprocess of removing a resin pattern of FIG. 1 in a stepwise manner.

FIG. 4A, FIG. 4B, and FIG. 4C are cross-sectional views showing aprocess of forming a metal pattern of FIG. 1 in a stepwise manner.

FIG. 5 is a flowchart showing a method of manufacturing a wire gridpattern according to another exemplary embodiment.

FIG. 6A, FIG. 6B, and FIG. 6C are cross-sectional views showing aprocess of removing a resin pattern of FIG. 5 in a stepwise manner.

FIG. 7 is a flowchart showing a method of manufacturing a wire gridpattern according to still another exemplary embodiment.

FIG. 8A, FIG. 8B, and FIG. 8C are cross-sectional views showing aprocess of removing a resin pattern of FIG. 7 in a stepwise manner.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. As such, the regions illustrated in the drawings areschematic in nature and their shapes are not intended to illustrate theactual shape of a region of a device and are not intended to belimiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a flowchart showing a method of manufacturing a wire gridpattern according to an exemplary embodiment. FIGS. 2A, 2B, 2C, 2D, and2E are cross-sectional views showing a process of forming a resinpattern of FIG. 1 in a stepwise manner.

Referring to FIG. 1, the method of manufacturing a wire grid patternaccording to an exemplary embodiment includes the steps of: forming aresin pattern (110); determining whether the resin pattern is defective(S120); removing the resin pattern in order to perform a reworking whenit is determined that the resin pattern is defective (S130); and forminga metal pattern (S140).

Referring to FIGS. 1 and 2A, first, a base member 100 is prepared. Thebase member 100, for example, may be a transparent or opaque insulatingsubstrate, such as a silicon substrate, a glass substrate, or a plasticsubstrate, but exemplary embodiments are not limited thereto. The basemember 100 means an underlayer substrate for forming a wire gridpattern.

Next, a metal layer 200 is formed on the base member 100 (S111). Themetal layer 200 contains a metal material having excellent reflectivityand/or conductivity and is formed into a wire grid pattern throughsubsequent processes. For example, the metal layer 200 may contain oneor more of aluminum, gold, silver, copper, chromium, iron, nickel,molybdenum, titanium, oxides thereof, and alloys thereof. FIG. 2A showsa case that the metal layer 200 is a single layer made of one of themetal materials. However, in some embodiments, the metal layer 200 maybe a multi-layer structure having a plurality of layers, and, in thiscase, each of the layers may be individually made of one of the metalmaterials. The method of forming the metal layer 200 on the base member100 may be performed by deposition, such as chemical vapor deposition(CVD) or physical vapor deposition (PVD), or sputtering, but exemplaryembodiments are not limited thereto.

Next, a mask layer 300 is formed on the metal layer 200 (S112). The masklayer 300 may be made of an inorganic insulating material, such assilicon nitride (SiN_(X)) or silicon oxide (SiO_(X)), or other metaloxides. As the material of the mask layer 300, a material having highetching selectivity to the metal layer 200 may be selected. In anexemplary embodiment, the metal layer 200 may be made of aluminum, andthe mask layer may be made of or silicon oxide (SiO_(X)). When theetching selectivity of the metal layer 200 and the mask layer 300increases, the consumption of the mask layer 300 during etching themetal layer 200 in order to form a wire grid pattern can be minimized,and thus it is possible to form a precise nano-sized wire grid pattern.In some embodiments, the mask layer may be a multi-layer structurehaving a plurality of layers.

Next, referring to FIGS. 1 and 2B, an adhesive layer 400 is formed onthe mask layer 300, and is baked (S113). The adhesive layer 400 servesto bond the mask layer 300 therebeneath and the resin layer 500 thereon.When the bonding force between the resin layer 500 and a layer disposedtherebeneath is not sufficient, the resin layer 500 may be strippedduring a process of removing a stamp after imprinting. The stripping ofthe resin layer 500 can be previously prevented by interposing theadhesive layer 400 between the mask layer 300 and the resin layer 500.

The adhesive layer 400 may contain a silane coupling agent. The silanecoupling agent according to an exemplary embodiment includes a compoundrepresented by Chemical Formula 1-1 below.

In the formula 1-1, R₁ and R₂ are each independently any one of —CH₃,—OCH₂CH₃, —OCH₃, and a functional group represented by Chemical Formula1-2 below.

In the formulae 1-1 and 1-2, R₃ is any one of an acrylate group and amethacrylate group, and n is an integer of 1 to 10.

A composition containing the silane coupling agent is applied onto themask layer 300 in which a hydroxyl group is exposed on the surfacethereof, and is then baked to induce a covalent bond between onemolecular end (for example, —OCH₃) of the silane coupling agent and atleast a part of the hydroxyl group (—OH) of the surface of the masklayer 300 as well as to remove a solvent in the composition, therebyforming a strong bond between the adhesive layer 400 and the mask layer300.

Next, referring to FIGS. 1 and 2C, the resin layer 500 is formed on theadhesive layer 400. The resin layer 500 may be made of a UV-curableresin material including an acrylate-based material, such aspentatetrathritol (meth)acrylate, dipentatetrathritol (meth)acrylate,polyester (meth)acrylate, or urethane (meth)acrylate. The resin layer500 may be formed by applying the resin material onto the adhesive layer400. The resin layer 500 may be formed to a thickness of 50 nm to 500nm, but embodiments are not limited thereto. The resin layer 500 may beformed to have a thickness to such a degree that a residual film layeris formed between the adhesive layer 400 and a pattern formed on thesurface of the resin layer 500 in consideration of the maximum height ofa pattern of a stamp 600. The resin layer 500 of FIG. 2C, which is aresin layer before curing, may have predetermined fluidity, and may becured while or after pressing the stamp 600.

Next, the stamp 600, which is patterned to face the base member 100sequentially provided thereon with the metal layer 200, the mask layer300, the adhesive layer 400, and the resin layer 500, is disposed andpressed (S115). A stripe-shaped pattern, which is a reverse phase of awire grid pattern to be manufactured, may be formed on one side of thestamp 600. The method of forming a pattern on one side of the stamp 600may be performed by laser interference lithography, electron beamlithography, or nano-imprint lithography.

Next, referring to FIGS. 1 and 2D, an imprint process of pressing thestamp 600 to one side of the resin layer 500 to transfer a pattern ofone side of the stamp 600 to one side of the resin layer 500. The resinlayer 500, to which the pattern of the stamp 600 was transferred, mayhave a plurality of patterns and a residual film layer. That is, thestamp 600 may be pressed such that the uppermost portion of the patternof the stamp 600 is not completely brought into contact with the surfaceof the adhesive layer 400 to be spaced apart from the surface thereof,and, in this case, a residual film layer may exist between the uppermostportion of the pattern of the stamp 600 and the adhesive layer 400. Insome embodiments, the stamp 600 may be pressed such that the uppermostportion of the pattern of the stamp 600 is brought into contact with thesurface of the adhesive layer 400, and thus the residual film layer maynot exist.

The resin layer 500 with the pattern is then irradiated with light(S116) (hereinafter, first light irradiation step). In an exemplaryembodiment, the light used in the first light irradiation step (S116)may be UV light having a wavelength of 350 nm to 370 nm. In the presentspecification, the wavelength of light refers to a center wavelength.The resin layer 500 containing a UV-curable resin material may be curedby UV irradiation, and the cured resin layer 501 can maintain the formedpattern shape even after detaching the stamp 600 and can function as ahard mask by removing the fluidity of the resin layer 500.

Further, a covalent bond is induced between an acrylate group of onemolecular end of the silane coupling agent in the adhesive layer 400 andan acrylate group in the resin layer 500 by UV irradiation, therebyforming a strong bond between the adhesive layer 400 and the cured resinlayer 501 that has the pattern. As described above, since the moleculeof the silane coupling agent in the adhesive layer 400 forms covalentbonds together with the mask layer therebeneath and the cured resinlayer 501 thereon, the bonding force between the mask layer 300 and thecured resin layer 501 can be improved through the adhesive layer 400.

Next, referring to FIGS. 1 and 2E, the stamp 600 is removed to exposethe cured resin layer 501 (S117), now a resin pattern 501, and the step(S120) of determining whether the formed resin pattern is defective isperformed. As used herein, “defective” means that a pattern is notcompletely transferred, the resin layer 501 is not completely cured soas to maintain a perfect shape, or at least a part of the resin layer501 or the pattern formed on the resin layer 501 is stripped off in thestep of removing the stamp 600.

If it is determined that the resin pattern 501 is defective (Y, or yes),a rework process including the step of removing the defective resinpattern 501 is performed. Although the resin pattern 501 is defective,when a rework process for reusing the previously manufactured substrateby removing only the defective portion without forming a new metal layerand a new mask layer is used, the time and cost required for a processof manufacturing a wire grid pattern can be reduced, and consequently,the yield and reliability of a wire grid pattern can be improved.

FIGS. 3A, 3B, and 3C are cross-sectional views showing a process ofremoving a resin pattern of FIG. 1 in a stepwise manner.

Referring to FIG. 1, the step (S130) of removing a resin patternincludes a UV irradiation step (S131), an acid treatment step (S132),and a step (S133) of removing a resin layer and a denatured adhesivelayer.

Referring to FIGS. 1 and 3A, an adhesive layer is irradiated with light(S131) (hereinafter, second light irradiation step). FIG. 3A shows acase that light is emitted from above, but light may be emitted frombelow. The light used in the second light irradiation step (S131) mayhave a different wavelength from the light used in the first lightirradiation step (S116). In an exemplary embodiment, the light used inthe second light irradiation step (S131) may be light having awavelength of 500 nm to 600 nm. In the present specification, thewavelength of light refers to a center wavelength. In the second lightirradiation step (S131), brook rearrangement may occur in the silanecoupling agent molecule in the adhesive layer 410, but exemplaryembodiments are not limited thereto.

The adhesive layer is then treated with an acid reagent (S132). As themethod of treating the adhesive layer with the acid reagent, a method ofapplying the acid reagent onto the adhesive layer or a method of dippingthe adhesive layer into the acid reagent is exemplified, but exemplaryembodiments are not limited thereto. The adhesive layer is denatured bythe second light irradiation step (S131) and the step of treating theadhesive layer with the acid reagent, and, as shown in FIG. 3A, a partof the molecular chain derived from the silane coupling agent moleculeis cut, and thus the adhesive layer 410 may be decomposed.

Specifically, when the bond between silicon (Si) and an oxygen group ofend of an alkyl chain is cut, a silicon-centered molecular unit mayremain while maintaining a covalent bond with a mask layer 310therebeneath, and an alkyl chain unit occupying a majority of theadhesive layer 410 may be detached from the surface of the mask layer310 while maintaining a covalent bond with a resin layer 501 thereon.That is, due to the denaturation of the adhesive layer 410, the masklayer 310 and the resin layer 501, which has been bonded to each otherthrough the adhesive layer 410, lose a boding force, and thus a reworkfor removing the resin layer 501 may be easily performed.

Next, referring to FIGS. 1 and 3B, the resin layer 501 and the denaturedadhesive layer 410 are removed (S133). As the method of removing theresin layer 501 and the denatured adhesive layer 410, a wet process ofapplying a solvent onto the resin layer 501 and the denatured adhesivelayer 410 or dipping the resin layer 501 and the denatured adhesivelayer 410 into the solvent is exemplified, but exemplary embodiments arenot limited thereto. As described above with reference to FIG. 3A, theresin layer 501 and alkyl chain molecules in the adhesive layer havinglost a bonding force with the mask layer 310 can be easily removed.

Then, referring to FIGS. 1 and 3C, a base member 100, a metal layer 200,and a mask layer 310 are provided in a state in which the adhesive layerand the resin layer were removed. In this case, a part of a silanecoupling agent molecule including a silicon oxide unit may remain on thesurface of the mask layer 310. A hydroxyl group of end of the remainingsilane coupling agent molecule including a silicon oxide unit can besubstantially chemically bonded with the hydroxyl group exposed on thesurface of the first mask layer 300. Therefore, the mask layer 310, inwhich a silicon oxide unit is exposed on the surface thereof, can form acovalent bond with the adhesive layer containing a silane coupling agentand formed in the rework process although the surface composition of themask layer 310 becomes different from that of the first mask layer 300,thereby continuing a process of manufacturing a wire grid patternwithout preparing a new metal layer and a new mask layer.

Although not shown in the drawings, the step of removing a resin patternmay further include the step of cleaning the mask layer in a state inwhich the adhesive layer and the resin layer are removed.

Next, the step (S110) of forming a resin pattern including the step(S113) of forming an adhesive layer on the mask layer 310 containing asilicon oxide unit exposed on the surface thereof and baking theadhesive layer, the step (S114) of forming a resin layer on the adhesivelayer, the step (S115) of disposing and pressing a patterned stamp, thestep (S116) of applying light, and the step (S117) of detaching theclamp is performed again. Thereafter, the step (S120) of determiningwhether the formed resin pattern is defective is performed, and then thestep (S140) of forming a metal pattern if the resin pattern is notdefective (N or no) is performed.

FIGS. 4A, 4B, and 4C are cross-sectional views showing a process offorming a metal pattern of FIG. 1 in a stepwise manner.

Referring to FIGS. 4A to 4C, first, a residual film layer of a resinlayer and an adhesive layer is etched (S141) (hereinafter, first etchingstep). Specifically, a resin layer 501, which is an exposed uppermostlayer, is etched to remove a residual film layer, and the remainingresin layer and the exposed adhesive layer is further etched to remove apart of the adhesive layer, thereby forming a patterned resin layer 502and a patterned adhesive layer 401 and exposing at least a part of amask layer 310 therebeneath.

Next, the mask layer 310 is etched (S142) (hereinafter, second etchingstep). Specifically, the exposed mask layer 310 is etched using thepatterned resin layer 502 and the patterned adhesive layer 401 as a hardmask, thereby forming a patterned mask layer 311 and exposing at least apart of a metal layer 200 therebeneath. Simultaneously, at least a partof the patterned resin layer 502 used as the hard mask, or the patternedresin layer 502 and at least a part of the patterned adhesive layer 401is consumed in the second etching step (S142) to be removed.

Next, the metal layer 200 is etched (S143) (hereinafter, third etchingstep). Specifically, the exposed metal layer 200 is etched using thepatterned resin layer 503, the patterned adhesive layer 401 and thepatterned mask layer as a hard mask, thereby forming a wire grid pattern201. As described above, since the patterned mask layer 311 used as ahard mask has high etching selectivity to the metal layer 200, it ispossible to control a precise pattern.

The first to third etching steps (S141, S142, and S143) may besequentially performed while changing the process conditions, such asthe kind of gas and/or plasma used in etching, etching temperature,etching time, and the like in consideration of the material of theexposed uppermost layer and the etching selectivity thereof. However, insome embodiments, the first to third etching steps (S141, S142, andS143) may also be substantially continuously performed withoutdistinction.

Hereinafter, a method of manufacturing a wire grid pattern according toanother exemplary embodiment will be described. However, for purposes ofsimplicity, descriptions of configurations thereof substantiallyidentical or similar to those of the above-mentioned method ofmanufacturing a wire grid pattern according to an exemplary embodimentwill be omitted, which is clearly understood to those skilled in theart.

FIG. 5 is a flowchart showing a method of manufacturing a wire gridpattern according to another exemplary embodiment. FIGS. 6A, 6B, and 6Care cross-sectional views showing a process of removing a resin patternof FIG. 5 in a stepwise manner.

Referring to FIG. 5, the method of manufacturing a wire grid patternaccording to another exemplary embodiment includes the steps of: forminga resin pattern (210); determining whether the resin pattern isdefective (S220); removing the resin pattern in order to perform areworking when it is determined that the resin pattern is defective(S230); and forming a metal pattern (S240).

The step (S210) of forming a resin pattern may includes the steps of:preparing a base member; forming a metal layer on the base member(S211); forming a mask layer on the metal layer (S212); forming anadhesive layer containing a silane coupling agent on the mask layer andbaking the adhesive layer (S213); forming a resin layer on the adhesivelayer (S214); disposing and pressing a patterned stamp (S215);irradiating the resin layer with light (S216); and removing the stamp(S217). In some embodiments, the mask layer may be a multi-layerstructure having a plurality of layers.

Meanwhile, the silane coupling agent according to another exemplaryembodiment includes a compound represented by Chemical Formula 2-1below.

In the formula 2-1, R₁ and R₂ are each independently any one of —CH₃,—OCH₂CH₃, —OCH₃, and a functional group represented by Chemical Formula2-2 below.

In the formulae 2-1 and 2-2, R₃ is any one of an acrylate group and amethacrylate group, and n is an integer of 1 to 10.

A composition containing the silane coupling agent is applied onto themask layer in which a hydroxyl group is exposed on the surface thereof,and is then baked to induce a covalent bond between one molecular end ofthe silane coupling agent and at least a part of the hydroxyl group ofthe surface of the mask layer as well as to remove a solvent in thecomposition, thereby forming a strong bond between the adhesive layerand the mask layer.

If it is determined that the resin pattern is defective (Y or yes) afterforming the resin pattern, a rework process including the step ofremoving the defective resin pattern is performed.

FIGS. 6A, 6B, and 6C are cross-sectional views showing a process ofremoving a resin pattern of FIG. 5 in a stepwise manner.

Referring to FIG. 5, the step (S230) of removing a resin patternincludes a base treatment step (S231), an acid treatment step (S232),and a step (S233) of removing a resin layer and a denatured adhesivelayer.

Referring to FIGS. 5 and 6A, an adhesive layer is treated with a basereagent (S231). When the adhesive layer is treated with the basereagent, brook rearrangement may occur in the silane coupling agentmolecule in the adhesive layer, but exemplary embodiments are notlimited thereto.

Next, the adhesive layer is treated with an acid reagent (S232). Theadhesive layer is denatured by the step of treating the adhesive layerwith the base reagent and the step of treating the adhesive layer withthe acidic reagent, and, as shown in FIG. 6A, a part of the molecularchain derived from the silane coupling agent molecule is cut, and thusthe adhesive layer may be decomposed.

Specifically, when the bond between silicon (Si) and an oxygen group ofend of an alkyl chain is cut, a silicon-centered molecular unit mayremain while maintaining a covalent bond with a mask layer 310therebeneath, and an alkyl chain unit occupying a majority of theadhesive layer 420 may be detached from the surface of the mask layer310 while maintaining a covalent bond with a resin layer 501 thereon.That is, due to the denaturation of the adhesive layer 420, the masklayer 310 and the resin layer 501, which has been bonded to each otherthrough the adhesive layer 420, lose a boding force, and thus a reworkfor removing the resin layer 501 may be easily performed.

Next, referring to FIGS. 5, 6B, and 6C, the resin layer and thedenatured adhesive layer are removed (S233), and a base member 100, ametal layer 200, and a mask layer 310 are provided in a state in whichthe adhesive layer and the resin layer were removed.

As described above with reference to FIG. 6A, the resin layer 501 andalkyl chain molecules in the adhesive layer 420 having lost a bondingforce with the mask layer 310 can be easily removed. In this case, apart of a silane coupling agent molecule including a silicon oxide unitmay remain on the surface of the mask layer 310. A hydroxyl group of endof the remaining silane coupling agent molecule including a siliconoxide unit can be substantially chemically bonded with the hydroxylgroup exposed on the surface of the first mask layer 300. Therefore, themask layer 310, in which a silicon oxide unit is exposed on the surfacethereof, can form a covalent bond with the adhesive layer containing asilane coupling agent and formed in the rework process although thesurface composition of the mask layer 310 becomes different from that ofthe first mask layer 300.

Next, the step (S210) of forming a resin pattern is performed again, andthen the step (S220) of determining whether the formed resin pattern isdefective is performed. In this case, if the resin pattern is notdefective (N or no), the step (S240) of forming a metal patternincluding the steps of: etching the adhesive layer and a residual filmlayer of the resin layer (S241); etching the mask layer (S242); andetching the metal layer (S243) is performed, thereby forming a wire gridpattern.

Hereinafter, a method of manufacturing a wire grid pattern according tostill another exemplary embodiment will be described.

FIG. 7 is a flowchart showing a method of manufacturing a wire gridpattern according to still another exemplary embodiment. FIGS. 8A, 8B,and 8C are cross-sectional views showing a process of removing a resinpattern of FIG. 7 in a stepwise manner.

Referring to FIG. 7, the method of manufacturing a wire grid patternaccording to still another exemplary embodiment includes the steps of:forming a resin pattern (S310); determining whether the resin pattern isdefective (S320); removing the resin pattern in order to perform areworking when it is determined that the resin pattern is defective(S330); and forming a metal pattern (S340).

The step (S310) of forming a resin pattern may includes the steps of:preparing a base member; forming a metal layer on the base member(S311); forming a mask layer on the metal layer (S312); forming anadhesive layer containing a silane coupling agent on the mask layer andbaking the adhesive layer (S313); forming a resin layer containing aphotoinitiator on the adhesive layer (S314); disposing and pressing apatterned stamp (S315); irradiating the resin layer with light (S316)(hereinafter, first light irradiation step); and removing the stamp(S317).

Meanwhile, the silane coupling agent according to still anotherexemplary embodiment includes a compound represented by Chemical Formula3-1 below.

In the formula 3-1, R₁ and R₂ are each independently any one of —CH₃,—OCH₂CH₃, —OCH₃, and a functional group represented by Chemical Formula3-2 below.

In the formulae 3-1 and 3-2, R₃ is any one of an acrylate group and amethacrylate group, and n is an integer of 1 to 10.

A composition containing the silane coupling agent is applied onto themask layer in which a hydroxyl group is exposed on the surface thereof,and is then baked to induce a covalent bond between one molecular end ofthe silane coupling agent and at least a part of the hydroxyl group ofthe surface of the mask layer as well as to remove a solvent in thecomposition, thereby forming a strong bond between the adhesive layerand the mask layer.

Meanwhile, in an exemplary embodiment, the light used in the first lightirradiation step (S316) may be UV light having a wavelength of 240 nm to260 nm or IR having a wavelength equal to or longer than the wavelengthof UV. The resin layer containing a photoinitiator may be cured by theirradiation of light having a wavelength capable of inducing the curingwith the photoinitiator, and the cured resin layer can maintain theformed pattern shape even after detaching the stamp and can function asa hard mask by removing the fluidity of the resin layer.

Further, a covalent bond is induced between an acrylate group of onemolecular end of the silane coupling agent in the adhesive layer and anacrylate group in the resin layer by the light irradiation, therebyforming a strong bond between the adhesive layer and the cured resinlayer.

If it is determined that the resin pattern is defective (Y or yes) afterforming the resin pattern, a rework process including the step (S330) ofremoving the defective resin pattern is performed.

FIGS. 8A, 8B, and 8C are cross-sectional views showing a process ofremoving a resin pattern of FIG. 7 in a stepwise manner.

Referring to FIG. 7, the step (S330) of removing a resin patternincludes a UV irradiation step (S331) and a step (S332) of removing aresin layer and a denatured adhesive layer.

Referring to FIGS. 7 and 8A, an adhesive layer is irradiated with UV(S331) (hereinafter, second light irradiation step). FIG. 8A shows acase that light is emitted from above, but light may be emitted frombelow. The UV used in the second light irradiation step (S331) may havea different wavelength from the UV used in the first light irradiationstep (S316). In an exemplary embodiment, the UV used in the second lightirradiation step (S331) may be UV light having a wavelength of 350 nm to370 nm. The adhesive layer is denatured by the second light irradiationstep (S331), and, as shown in FIG. 8A, a part of the molecular chainderived from the silane coupling agent molecule is cut, and thus theadhesive layer 430 may be decomposed.

Specifically, when the bond between silicon (Si) and a methyl grouplocated at the 1-position of an ortho-nitrobenzyl group is cut, asilicon-centered molecular unit may remain while maintaining a covalentbond with a mask layer 310 therebeneath, and a nitrobenzene unit and analkyl chain unit ether-bonded to the nitrobenzene unit, which occupy amajority of the adhesive layer 430, may be detached from the surface ofthe mask layer 310 while maintaining a covalent bond with a resin layer501 thereon. That is, due to the denaturation of the adhesive layer 430,the mask layer 310 and the resin layer 501, which has been bonded toeach other through the adhesive layer 430, lose a boding force, and thusa rework for removing the resin layer 501 may be easily performed.

Next, referring to FIGS. 7, 8B, and 8C, the resin layer and thedenatured adhesive layer are removed (S332), and a base member 100, ametal layer 200, and a mask layer 310 are provided in a state in whichthe adhesive layer and the resin layer were removed.

As described above with reference to FIG. 8A, the resin layer 501 andalkyl chain molecules containing a nitrobenze unit in the adhesive layer430 having lost a bonding force with the surface of the mask layer 310can be easily removed. In this case, a part of a silane coupling agentmolecule including a silicon oxide unit may remain on the surface of themask layer 310. A hydroxyl group of end of the remaining silane couplingagent molecule including a silicon oxide unit can be substantiallychemically bonded with the hydroxyl group exposed on the surface of thefirst mask layer 300. Therefore, the mask layer 310, in which a siliconoxide unit is exposed on the surface thereof, can form a covalent bondwith the adhesive layer containing a silane coupling agent and formed inthe rework process although the surface composition of the mask layer310 becomes different from that of the first mask layer 300.

Next, the step (S310) of forming a resin pattern is performed again, andthen the step (S320) of determining whether the formed resin pattern isdefective is performed. In this case, if the resin pattern is notdefective (N or no), the step (S340) of forming a metal patternincluding the steps of: etching the adhesive layer and a residual filmlayer of the resin layer (S341); etching the mask layer (S342); andetching the metal layer (S343) is performed, thereby forming a wire gridpattern.

As described above, according to the method of manufacturing a wire gridpattern according to an embodiment, the resin layer is strongly bondedwith the substrate by the silane coupling agent, thereby minimizing thestripping of the resin pattern even during removing the stamp.

Further, since the silane coupling agent is denatured by ultravioletlight or under basic and acidic conditions to lose bonding force, thebonding force between the substrate and the resin layer can be easilycontrolled, thereby increasing the production yield of a wire gridpattern as well as improving the processibility of a rework process.

Moreover, since a functional group capable of forming a covalent grouptogether with the silane coupling agent is exposed on the surface of thesubstrate from which the resin layer was removed, the bonding forcebetween the substrate and the silane coupling agent becomes excellent.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concept is not limitedto such embodiments, but rather to the broader scope of the presentedclaims and various obvious modifications and equivalent arrangements.

What is claimed is:
 1. A silane coupling agent, represented by ChemicalFormula 1-1, Chemical Formula 2-1, or Chemical Formula 3-1 below:

wherein in the formula 1-1, R₁ and R₂ are each independently any one of—CH₃, —OCH₂CH₃, —OCH₃, and a functional group represented by ChemicalFormula 1-2 below; in the formula 2-1, R₁ and R₂ are each independentlyany one of —CH₃, —OCH₂CH₃, —OCH₃, and a functional group represented byChemical Formula 2-2 below; and in the formula 3-1, R₁ and R₂ are eachindependently any one of —CH₃, —OCH₂CH₃, —OCH₃, and a functional grouprepresented by Chemical Formula 3-2 below,

and wherein in the formulae 1-1, 1-2, 2-1, 2-2, 3-1, and 3-2, R₃ is anyone of an acrylate group and a methacrylate group, and n is an integerof 1 to
 10. 2. The silane coupling agent of claim 1, wherein, in theformulae 1-1, 2-1, and 3-1, R₁ and R₂ are each independently any one offunctional groups represented by —CH₃, —OCH₂CH₃, and —OCH₃.